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symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v 54 i d @ t c = 100c continuous drain current, v gs @ 10v 38 a i dm pulsed drain current 210 p d @t c = 25c maximum power dissipation 71 w p d @t a = 25c maximum power dissipation 3.8 w linear derating factor 0. 48 w/c t j , t stg junction and storage temperature range -55 to + 175 c www.irf.com 1 irl3715pbf irl3715spbf IRL3715LPBF smps mosfet hexfet power mosfet notes through are on page 11 absolute maximum ratings d 2 pak irl3715s to-220ab irl3715 to-262 irl3715l thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.1 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 r ja junction-to-ambient (pcb mount) ??? 40 applications benefits ultra-low gate impedance very low r ds(on) at 4.5v v gs fully characterized avalanche voltage and current high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for computer processor power lead-free v dss r ds(on) max i d 20v 14m ? 54a
irl3715/s/lpbf 2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.9 1.3 v t j = 25c, i s = 21a, v gs = 0v ??? 0.8 ??? t j = 125c, i s = 21a, v gs = 0v t rr reverse recovery time ??? 37 56 ns t j = 25c, i f = 21a, v r =20v q rr reverse recovery charge ??? 28 42 nc di/dt = 100a/s t rr reverse recovery time ??? 38 57 ns t j = 125c, i f = 21a, v r =20v q rr reverse recovery charge ??? 30 45 nc di/dt = 100a/s dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 110 mj i ar avalanche current ??? 21 a avalanche characteristics s d g diode characteristics 54 210 symbol parameter min. typ. max. units conditions g fs forward transconductance 26 ??? ??? s v ds = 10v, i d = 21a q g total gate charge ??? 11 17 i d = 21a q gs gate-to-source charge ??? 3.8 ??? nc v ds = 10v q gd gate-to-drain ("miller") charge ??? 4.4 ??? v gs = 4.5v q oss output gate charge ??? 11 17 v gs = 0v, v ds = 10v t d(on) turn-on delay time ??? 6.4 ??? v dd = 10v t r rise time ??? 73 ??? i d = 21a t d(off) turn-off delay time ??? 12 ??? r g = 1.8 ? t f fall time ??? 5.1 ??? v gs = 4.5v c iss input capacitance ??? 1060 ??? v gs = 0v c oss output capacitance ??? 700 ??? v ds = 10v c rss reverse transfer capacitance ??? 120 ??? pf ? = 1.0mhz v sd diode forward voltage parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.022 ??? v/c reference to 25c, i d = 1ma ??? 11 14 v gs = 10v, i d = 26a ??? 15 20 v gs = 4.5v, i d = 21a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 16v, v gs = 0v ??? ??? 100 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 16v gate-to-source reverse leakage ??? ??? -200 na v gs = -16v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m ?
irl3715/s/lpbf www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 4.5v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 52a
irl3715/s/lpbf 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.7 1.2 1.7 2 .2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 0 5 10 15 20 2 5 0 2 4 6 8 10 12 14 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 21a v = 10v ds v = 16v ds 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
irl3715/s/lpbf www.irf.com 5 fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %

+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0. 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 17 5 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d limited by package
irl3715/s/lpbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as 25 50 75 100 125 150 175 0 40 80 120 160 200 240 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 8.5a 15a 21a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
irl3715/s/lpbf www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
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irl3715/s/lpbf 8 www.irf.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector

dimensions are shown in millimeters (inches)

example: in the assembly line "c" t his is an ir f1010 lot code 1789 assembled on ww 19, 1997 part numbe r as s e mb l y lot code dat e code year 7 = 1997 line c week 19 logo rectifier int e r nat ional note: "p" in assembly line position indicates "lead-free"
irl3715/s/lpbf www.irf.com 9

dimensions are shown in millimeters (inches) note: "p" in assembly line pos i ti on i ndi cates " l ead- f r ee" f 530s t his is an irf 530s wit h lot code 8024 as s e mble d on ww 02, 2000 in the assembly line "l" as s e mb l y lot code int ernational rectifier logo part numbe r dat e code year 0 = 2000 we e k 0 2 line l f 530s a = assembly site code week 02 p = designate s lead-f ree product (opt ional) rectifier international logo lot code as s e mb l y year 0 = 2000 dat e code part number
irl3715/s/lpbf 10 www.irf.com to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) assembly lot code rectifier international as s e mb led on ww 19, 1997 note: "p" in assembly line pos i ti on i ndi cates "l ead-f r ee" in the assembly line "c" logo t his is an irl3103l lot code 1789 example: line c dat e code week 19 ye ar 7 = 1997 part number part number logo lot code assembly international rectifier product (opt ional) p = de s i gnat e s l e ad-f r e e a = assembly site code week 19 ye ar 7 = 1997 dat e code or
irl3715/s/lpbf www.irf.com 11 repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.51mh r g = 25 ? , i as = 21a,v gs =10v pulse width 400s; duty cycle 2%. this is only applied to to-220a package this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/04

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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